Title :
New SRAM design using body bias technique for ultra low power applications
Author :
Moradi, Farshad ; Wisland, Dag T. ; Mahmoodi, Hamid ; Berg, Yngvar ; Cao, Tuan Vu
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo, Norway
Abstract :
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3 V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65 nm ST models are used for simulations.
Keywords :
SRAM chips; integrated circuit design; low-power electronics; SRAM design; body bias technique; standard cells; static noise margin; supply voltage; ultra low power applications; Application software; Circuit noise; Dynamic voltage scaling; Energy consumption; Low voltage; Nanoelectronics; Personal digital assistants; Portable computers; Random access memory; Threshold voltage; 65nm; Low power; SRAM; Static Noise Margin;
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-6454-8
DOI :
10.1109/ISQED.2010.5450536
