Title :
2 GHz MeiÃ\x9fner VCO in Si Bipolar Technology
Author :
Wohlmuth, H.D. ; Simbürger, W. ; Knapp, H. ; Scholtz, A.L.
Author_Institution :
INFINEON Technologies AG, Corporate Research, D-81739 Munich, Otto-Hahn-Ring 6, Germany; Institut fÿr Nachrichten- u. Hochfrequenztechnik, A-1040 Vienna, GuÃ\x9fhausstr. 25/389. Tel.: +49 89 636-48490, E-Mail: hans-dieter. wohlmuth@infineon.com
Abstract :
A completely integrated 2 0Hz Meißner VCO in silicon bipolar for wireless communications is presented. The chip is implemented in a 25GHz fT, 0.8¿m, 3-layer-interconnect silicon bipolar production technology B6HF. The Meißner type oscillator circuit uses on-chip multiple coupled inductors and achieves a phase noise of -102dBc/Hz at an offset of l00kHz. The VCO is designed for 3V to 5V battery operation and delivers ¿8.7 dBm of output power. The VCO meets the specifications for DECT cordless telephone sets.
Keywords :
Batteries; Coupling circuits; Inductors; Integrated circuit technology; Phase noise; Power generation; Production; Silicon; Voltage-controlled oscillators; Wireless communication;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338305
