Title :
Surfaces and interfaces for controlled defect engineering
Author :
Seebauer, Edmund G.
Author_Institution :
Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
Keywords :
elemental semiconductors; integrated circuit technology; semiconductor doping; semiconductor junctions; silicon; controlled defect engineering; dopant activation; integrated circuits; point defects; transient enhanced diffusion; ultrashallow junction applications; Annealing; Atomic measurements; Bonding; Boron; Chemical engineering; Lattices; Silicon; Surface cleaning; Surface impedance; Surface treatment;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734658
