• DocumentCode
    2146268
  • Title

    1.5dB Noise Figure Ka-Band Low Noise Monolithic Amplifier using 0.15um T-gate Pseudomorphic Heterojunction FET´s

  • Author

    Takahashi, K. ; Maruhashi, K. ; Negishi, H. ; Eda, T. ; Tsutsui, H.

  • Author_Institution
    ULSI Device Development Laboratories, NEC Corporation
  • Volume
    1
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    210
  • Lastpage
    213
  • Abstract
    Ka-band ultra low-noise three stage monolithic amplifier has been developed using 0.15um T-shaped gate pseudomorphic heterojunction FETs (p- HJFETs). The noise figure of the developed amplifier are less than 1.5dB with an associated gain of 20dB in 27-31GHz band.
  • Keywords
    Circuit noise; Electrodes; Electron mobility; FETs; Heterojunctions; Laboratories; Low-noise amplifiers; National electric code; Noise figure; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338310
  • Filename
    4139405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146268