DocumentCode :
2146420
Title :
Light emitting devices based on silicon nanoclusters
Author :
Presti, C.D. ; Irrera, A. ; Franzò, G. ; Priolo, F. ; Iacona, F. ; Sanfilippo, D. ; Stefano, G. Di ; Piana, A. ; Fallica, P.G.
Author_Institution :
MATIS-INFM, Catania, Italy
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
45
Lastpage :
47
Abstract :
In this work we report the electrical and optical properties of innovative MOS devices, where the dielectric layer consists of a low temperature annealed substoichiometric SiOx film prepared by plasma enhanced chemical vapor deposition (PECVD), eventually doped with Er ions.
Keywords :
MIS devices; annealing; dielectric materials; dielectric thin films; elemental semiconductors; erbium; light emitting devices; nanostructured materials; plasma CVD; silicon; silicon compounds; stoichiometry; Er ion doping; MOS devices; Si; SiO2:Er; SiOx film; dielectric layer; electrical properties; light emitting devices; low temperature annealing; optical properties; plasma enhanced chemical vapor deposition; silicon nanoclusters; substoichiometric film; Dielectric devices; MOS devices; Nanoscale devices; Optical devices; Optical films; Particle beam optics; Plasma properties; Plasma temperature; Silicon; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516398
Filename :
1516398
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2146420
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