• DocumentCode
    2146420
  • Title

    Light emitting devices based on silicon nanoclusters

  • Author

    Presti, C.D. ; Irrera, A. ; Franzò, G. ; Priolo, F. ; Iacona, F. ; Sanfilippo, D. ; Stefano, G. Di ; Piana, A. ; Fallica, P.G.

  • Author_Institution
    MATIS-INFM, Catania, Italy
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    In this work we report the electrical and optical properties of innovative MOS devices, where the dielectric layer consists of a low temperature annealed substoichiometric SiOx film prepared by plasma enhanced chemical vapor deposition (PECVD), eventually doped with Er ions.
  • Keywords
    MIS devices; annealing; dielectric materials; dielectric thin films; elemental semiconductors; erbium; light emitting devices; nanostructured materials; plasma CVD; silicon; silicon compounds; stoichiometry; Er ion doping; MOS devices; Si; SiO2:Er; SiOx film; dielectric layer; electrical properties; light emitting devices; low temperature annealing; optical properties; plasma enhanced chemical vapor deposition; silicon nanoclusters; substoichiometric film; Dielectric devices; MOS devices; Nanoscale devices; Optical devices; Optical films; Particle beam optics; Plasma properties; Plasma temperature; Silicon; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516398
  • Filename
    1516398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146420