Title :
Heterojunction bipolar transistors: status and directions
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
A tutorial review is presented of heterojunction bipolar transistor (HBT) principles; the technological status and performance of Si-, GaAs-, and InP-based HBTs; and prospects for further advances in HBTs for digital, analog and microwave applications. Coherently strained structures and their advantages are discussed. The experimental achievement of ft values above 150-GHz, f max values above 200 GHz, and digital circuits clocked above 25 GHz is highlighted
Keywords :
MMIC; bipolar integrated circuits; digital integrated circuits; heterojunction bipolar transistors; linear integrated circuits; reviews; solid-state microwave devices; 150 GHz; 200 GHz; 25 GHz; GaAs; HBT; III-V semiconductors; InP; Si; analogue applications; coherently strained structures; digital applications; digital circuits; elemental semiconductors; heterojunction bipolar transistor; microwave applications; review; Bipolar transistors; Capacitance; Charge carrier processes; Costs; Doping profiles; Electron emission; Heterojunction bipolar transistors; Microwave technology; Paper technology; Photonic band gap;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69461
