• DocumentCode
    2146438
  • Title

    Efficient electroluminescence from rare-earth implanted SiO2 metal-oxide-semiconductor structures

  • Author

    Sun, J.M. ; Skorupa, W. ; Dekorsy, T. ; Helm, M. ; Rebohle, L. ; Gebel, T.

  • Author_Institution
    Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    The IR, green, and UV electroluminescence from rare-earth (Er, Tb, and Gd) implanted SiO2 MOS devices is studied, exhibiting quantum efficiencies comparable to III-V light emitting diodes.
  • Keywords
    MIS devices; electroluminescence; ion implantation; light emitting devices; silicon compounds; IR electroluminescence; MOS devices; SiO2:Er; SiO2:Gd; SiO2:Tb; UV electroluminescence; green electroluminescence; metal-oxide-semiconductor structures; quantum efficiencies; rare-earth implanted SiO2; Annealing; Electrodes; Electroluminescence; Electroluminescent devices; Erbium; III-V semiconductor materials; Ion beams; Light emitting diodes; Silicon; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516399
  • Filename
    1516399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146438