DocumentCode :
2146438
Title :
Efficient electroluminescence from rare-earth implanted SiO2 metal-oxide-semiconductor structures
Author :
Sun, J.M. ; Skorupa, W. ; Dekorsy, T. ; Helm, M. ; Rebohle, L. ; Gebel, T.
Author_Institution :
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
48
Lastpage :
50
Abstract :
The IR, green, and UV electroluminescence from rare-earth (Er, Tb, and Gd) implanted SiO2 MOS devices is studied, exhibiting quantum efficiencies comparable to III-V light emitting diodes.
Keywords :
MIS devices; electroluminescence; ion implantation; light emitting devices; silicon compounds; IR electroluminescence; MOS devices; SiO2:Er; SiO2:Gd; SiO2:Tb; UV electroluminescence; green electroluminescence; metal-oxide-semiconductor structures; quantum efficiencies; rare-earth implanted SiO2; Annealing; Electrodes; Electroluminescence; Electroluminescent devices; Erbium; III-V semiconductor materials; Ion beams; Light emitting diodes; Silicon; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516399
Filename :
1516399
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2146438
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