Title :
Memory evolution: Multi-functioning Unified-Random Access Memory (URAM)
Author :
Choi, Yang-Kyu ; Han, Jin-Woo
Author_Institution :
Sch. of EECS, KAIST, Daejeon, South Korea
Abstract :
A new paradigm for silicon memory technology is proposed. A technological breakthrough that will overcome the saturation in revenue obtained from `scaling¿, a novel type of fusion memory is presented. A high-speed DRAM and non-volatile flash memory are integrated in a single memory transistor. The memory cell is named unified-random access memory (URAM), as multi-functional operation is processed in a single memory cell. The paradigm shift from `scaling¿ to `multi-function¿ will create new value and continue the evolution of silicon memory technology.
Keywords :
DRAM chips; elemental semiconductors; flash memories; silicon; Si; URAM operation; fusion memory; high-speed DRAM; memory evolution; multifunctioning unified-random access memory; nonvolatile flash memory; silicon memory technology; single memory cell; single memory transistor; Cost function; Ferroelectric films; FinFETs; Flash memory; Material storage; Nonvolatile memory; Packaging; Random access memory; SONOS devices; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734671
