On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

Author

Shaowu, Chen ; Xiaoguang, Tu ; Jinzhong, Yu

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

fYear

2005

fDate

21-23 Sept. 2005

Firstpage

54

Lastpage

56

Abstract

A novel Si-based waveguide electro-optical modulator with shunt MOS capacitors is proposed, simulated, and analyzed. A positive bias is applied on the special n-i-p-i-n structure to conduct the electro-optic modulation. A phase modulation efficiency of V_πL_π = 3.2 (V·cm) has been demonstrated for 4 μm inner-rib width. For 1 μm inner-rib width, the switching speed exceeds 7.5 GHz. With the excellent high frequency characteristics, the device is believed to be of great potential for the all silicon-based OEICs applications.

Keywords

MOS capacitors; electro-optical modulation; integrated optics; optical design techniques; optical waveguides; phase modulation; silicon-on-insulator; MOS dual capacitor structure; SOI waveguide; Si-SiO₂; Si-based waveguide; all silicon-based OEIC; electrooptic modulation; electrooptic modulator; high frequency characteristics; high speed modulator; inner-rib width; modulator design; modulator simulation; n-i-p-i-n structure; phase modulation efficiency; shunt MOS capacitors; Charge carrier processes; Doping; Electrooptic modulators; MOS capacitors; Optical films; Optical modulation; Optical sensors; Optical waveguides; Semiconductor waveguides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2005. 2nd IEEE International Conference on

Print_ISBN

0-7803-9070-9

Type

conf

DOI

10.1109/GROUP4.2005.1516401

Filename

1516401