DocumentCode
2146532
Title
A model calculation on optical gain and co-stimulated emissions of phonons and phonons in silicon
Author
Chen, M.J. ; Tsai, C.S.
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
57
Lastpage
59
Abstract
This study presents a model calculation on the optical gain and bandgap energy and the rate equations for electron, photon, and phonon in silicon which takes into account the detailed band-edge structures of the conduction and valence bands. The approach and findings of this model calculation are systematically presented.
Keywords
conduction bands; elemental semiconductors; energy gap; optical materials; phonons; silicon; stimulated emission; valence bands; Co-stimulated emissions; Si; band-edge structures; bandgap energy; conduction band; electron rate equations; optical gain; phonon rate equations; phonons; photon rate equations; silicon; valence band; Crystallization; Electron optics; Optical refraction; Optical variables control; Phonons; Photonic band gap; Photonic crystals; Silicon; Solids; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516402
Filename
1516402
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