Study of Si-coupled superconducting field-effect transistor by tunneling spectroscopy

Author

Nishino, T. ; Hatano, M. ; Hasegawa, H. ; Kure, T. ; Yagi, K. ; Kawabe, U.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

286

Lastpage

289

Abstract

A superconducting field-effect transistor with a 0.1- mu m length gate electrode was fabricated, and its performance was studied by tunneling spectroscopy. Two superconducting electrodes (source and drain) were formed by a self-aligned fabrication process. Superconducting current flowing through the semiconductor (Si) between the two superconducting electrodes (Nb) was found to be controlled by applying a gate-bias voltage. The reflection of carriers at the boundary between p-type Si-single crystal and NbN film was studied by measuring the electrical resistance of a p-Si-coupled junction with coplanar structure. The results elucidate the boundary condition in the superconductor-semiconductor proximity system.<>

Keywords

elemental semiconductors; field effect transistors; niobium compounds; silicon; superconducting junction devices; 0.1 micron; Nb; NbN film; Si; boundary condition; coplanar structure; electrical resistance; gate-bias voltage; length gate electrode; performance; reflection of carriers; self-aligned fabrication process; superconducting current through semiconductor; superconducting field-effect transistor; superconductor-semiconductor proximity system; tunneling spectroscopy; Electrodes; FETs; Fabrication; Josephson junctions; Niobium; Reflection; Spectroscopy; Superconducting films; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32813

Filename

32813