DocumentCode :
2146587
Title :
Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si1-xGex layer
Author :
Lobanov, D.N. ; Novikov, A.V. ; Shaleev, M.V. ; Drozdov, Yu N. ; Krasilnik, Z.F. ; Yablonskiy, A.N.
Author_Institution :
Inst. of Phys. of Microstructures, Russian Acad. Sci., Nizhny Novgorod, Russia
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
63
Lastpage :
64
Abstract :
Photoluminescence (PL) of SiGe/Si(001) self-assembled islands grown on a strained Si1-xGex layer (x≤20%) has been investigated. PL signal from the islands with different shapes and the nonlinear dependence of the intensity of the PL signal from the islands at room temperature on composition of the GeSi layer have been observed.
Keywords :
Ge-Si alloys; elemental semiconductors; island structure; photoluminescence; self-assembly; semiconductor growth; silicon; 293 to 298 K; GeSi layer composition; PL signal; SiGe-Si; SiGe-Si(001) self-assembled islands; photoluminescence; room temperature; strained Si1-xGex layer; Atomic force microscopy; Germanium silicon alloys; Microstructure; Optical buffering; Photoluminescence; Physics; Potential well; Shape; Silicon germanium; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516404
Filename :
1516404
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2146587
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