DocumentCode :
2146651
Title :
Photoluminescence of undoped and erbium-doped SiO/SiO2 multilayers
Author :
Jambois, O. ; Ardyanian, M. ; Wora-Adeola, G. ; Rinnert, H. ; Miska, P. ; Devaux, X. ; Vergnat, M.
Author_Institution :
Univ. Henri Poincare, Nancy, France
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
68
Lastpage :
70
Abstract :
We show the possibility to obtain amorphous SiO/SiO2 and silicon nanocrystal (Si-nc) superlattices by evaporation. The size of the Si-nc is well controlled. The coupling between the nanocrystals and erbium ions is studied.
Keywords :
amorphous state; erbium; evaporation; materials preparation; nanostructured materials; optical multilayers; photoluminescence; silicon compounds; superlattices; Si; Si-SiO2; Si-SiO2:Er; SiO-SiO2 multilayers; amorphous SiO-SiO2; erbium-doped multilayers; evaporation; nanocrystal-erbium ion coupling; photoluminescence; silicon nanocrystal; silicon superlattices; undoped multilayers; Annealing; Atmosphere; Erbium; Infrared spectra; Nanocrystals; Nonhomogeneous media; Photoluminescence; Semiconductor films; Silicon; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516406
Filename :
1516406
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2146651
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