Title :
CMOS-compatible zero-mask One Time Programmable (OTP) memory design
Author :
Chan, Wan Tim ; Ng, K.P. ; Lee, M.C. ; Kwong, K.C. ; Li, Lin ; Ng, Ricky M Y ; Man, Tsz Yin ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were fabricated in standard 0.18-¿m CMOS technology to verify the functionality of the design.
Keywords :
CMOS memory circuits; CMOS-compatible zero-mask one time programmable memory design; breakdown voltage; CMOS technology; Circuits; Continuous wavelet transforms; Design engineering; Design methodology; Dielectric breakdown; Diodes; Resistors; Switches; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734679
