• DocumentCode
    2146700
  • Title

    Nonvolatile SRAM cell based on CuxO

  • Author

    Xue, Xiaoyong ; Jin, Gang ; Zhang, Ji ; Xu, Le ; Ding, Yiqing ; Xie, Yufeng ; Zhao, Changhong ; Chen, B.A. ; Lin, Yinyin

  • Author_Institution
    ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    869
  • Lastpage
    871
  • Abstract
    A nonvolatile static random access memory (NVSRAM) cell with two back-up CuxO memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.
  • Keywords
    CMOS memory circuits; SRAM chips; copper compounds; CMOS process; CuxO; back-up memory devices; dynamic supply voltage scheme; nonvolatile SRAM cell; nonvolatile static random access memory cell; CMOS process; CMOS technology; Energy consumption; Leakage current; Logic devices; Manufacturing processes; Nonvolatile memory; Phase change materials; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734681
  • Filename
    4734681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146700