Title :
Fully-Depleted 0.25 Micron Silicon-on-Insulator MOSFET Transistors for Microwave Applications
Author :
Vanhoenacker-Janvier, D. ; Gillon, R. ; Raynaud, C. ; Martin, F.
Author_Institution :
Microwave Laboratory, Université catholique de Louvain, Bâtiment Maxwell, place du Levant, 3 B-1348 Louvain-la-Neuve, Belgium. vanhoenacker@emic.ucl.ac.be
Abstract :
Thin film fully-depleted Silicon-on-Insulator (SOI) CMOS technology can achieve a maximum oscillation frequency fmax of 50 GHz for 1V supply voltage, when TiSi2 is used on the gate. This kind of performances and the advantages of the SOI transistors fit the needs for low-voltage low-power microwave applications. The accurate extraction of the small signal equivalent circuit of those transistors is necessary for their optimisation and the design of future microwave circuits.
Keywords :
CMOS technology; Design optimization; Equivalent circuits; Frequency; MOSFET circuits; Microwave transistors; Semiconductor thin films; Signal design; Silicon on insulator technology; Voltage;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338398
