• DocumentCode
    2146795
  • Title

    Optical properties of ultra thin single Si/SiO2 quantum wells

  • Author

    Pauc, N. ; Calvo, V. ; Eymery, J. ; Fournel, F. ; Magnea, N.

  • Author_Institution
    CEA, Grenoble, France
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    84
  • Lastpage
    86
  • Abstract
    We performed a low temperature photoluminescence study of ultra thin single Si/SiO2 quantum wells. We observe a strong quantum confinement effect and a high increase in the internal quantum efficiency in the thinnest wells.
  • Keywords
    elemental semiconductors; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; silicon-on-insulator; Si-SiO2; Si/SiO2 quantum wells; internal quantum efficiency; low temperature photoluminescence; optical properties; quantum confinement effect; ultrathin single quantum wells; Charge carrier processes; Crystallization; Ellipsometry; Photoluminescence; Potential well; Quantum dots; Radiative recombination; Silicon on insulator technology; Thickness measurement; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516412
  • Filename
    1516412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146795