• DocumentCode
    2146898
  • Title

    Understanding the resistance switching mechanisms of binary metal oxides with the percolation model

  • Author

    Yang, J.F. ; Liu, L.F. ; Sun, B. ; Tang, H. ; Xu, N. ; Wang, Y. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Ma, T.P.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    940
  • Lastpage
    942
  • Abstract
    Binary metal oxide TiO2 and HfO2 based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.
  • Keywords
    Weibull distribution; electrical resistivity; hafnium compounds; random-access storage; switching; titanium compounds; HfO2; TiO2; Weibull model; binary metal oxides; percolation model; power ditribution; random access memories; resistance switching; voltage distribution; Dielectric breakdown; Electric resistance; Electrodes; Immune system; Microelectronics; Nanotechnology; Pulsed laser deposition; Random access memory; Sun; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734689
  • Filename
    4734689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146898