Title :
Understanding the resistance switching mechanisms of binary metal oxides with the percolation model
Author :
Yang, J.F. ; Liu, L.F. ; Sun, B. ; Tang, H. ; Xu, N. ; Wang, Y. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Ma, T.P.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Binary metal oxide TiO2 and HfO2 based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.
Keywords :
Weibull distribution; electrical resistivity; hafnium compounds; random-access storage; switching; titanium compounds; HfO2; TiO2; Weibull model; binary metal oxides; percolation model; power ditribution; random access memories; resistance switching; voltage distribution; Dielectric breakdown; Electric resistance; Electrodes; Immune system; Microelectronics; Nanotechnology; Pulsed laser deposition; Random access memory; Sun; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734689
