Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration

Author

Liu, Ming ; Guan, Weihua ; Long, Shibing ; Liu, Qi ; Wang, Wei

Author_Institution

Lab. of Nanofabrication & Novel Device Integration, Chinese Acad. of Sci., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

905

Lastpage

908

Abstract

Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO₂ memory devices with the sandwiched structure of Cu/ZrO₂:Cu/Pt. The ratio between the high and low resistance is in the order of 10⁶. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.

Keywords

MIM devices; copper; doping; platinum; random-access storage; sandwich structures; zirconium compounds; Cu-ZrO₂:Cu-Pt; ON-state resistance; cross-point array; cross-point integration; memory devices; metal-insulator-metal structure; multilevel storage; nonpolar resistive switching; reset operation; resistive random access memory; sandwiched structure; set compliance current; set operation; storage capacity 64 bit; voltage pulse mode; Bridge circuits; CMOS technology; Educational institutions; Electrodes; Gold; Microelectronics; Nonvolatile memory; Protection; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734692

Filename

4734692