DocumentCode :
2147013
Title :
Photonic crystal development using 193 nm optical lithography
Author :
Salib, Mike ; Michaeli, Albert ; Lazar, Adi ; Bechor, Haviv ; Settle, Michael ; Krauss, Thomas F.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
111
Lastpage :
113
Abstract :
We report photonic crystal designs fabricated in silicon on insulator wafers using 248 nm and 193 nm deep-UV lithography. This work was carried out using standard CMOS equipment and processes in an Intel fab.
Keywords :
optical design techniques; optical fabrication; photonic crystals; silicon-on-insulator; ultraviolet lithography; 193 nm; 248 nm; CMOS; deep-UV lithography; optical lithography; photonic crystal; silicon on insulator; Etching; Lattices; Lithography; Optical control; Optical device fabrication; Optical sensors; Optical waveguides; Photonic crystals; Resists; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516421
Filename :
1516421
Link To Document :
بازگشت