Title :
Characteristics of a highly scalable bridge phase change memory
Author :
Chen, Yi-Chou ; Lin, Yuyu ; Shih-Hung Chen ; Cheng, Huai-Yu ; Lung, Hsiang-Lan ; Raoux, Simone ; Rettner, Charles T. ; Burr, Geoffrey W. ; Lam, Chung H.
Author_Institution :
IBM/Macronix Phase Change Memory Joint Project, Macronix Int. Co., Ltd., HsinChu, Taiwan
Abstract :
Recent advances of a highly scalable bridge phase change memory cell are presented. To fabricate and characterize highly scaled devices, designs in both the process procedure and the testing algorism are considered extensively. We also compare the characteristics of the devices made from different types of materials. The experimental data reveal the superior scaling properties of the bridge phase change memory in different materials.
Keywords :
phase change memories; bridge phase change memory; memory cell; phase change memory; Bridges; Dielectric thin films; Electrodes; Lithography; MOSFET circuits; Phase change materials; Phase change memory; Scalability; Testing; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734693
