• DocumentCode
    2147031
  • Title

    Characteristics of a highly scalable bridge phase change memory

  • Author

    Chen, Yi-Chou ; Lin, Yuyu ; Shih-Hung Chen ; Cheng, Huai-Yu ; Lung, Hsiang-Lan ; Raoux, Simone ; Rettner, Charles T. ; Burr, Geoffrey W. ; Lam, Chung H.

  • Author_Institution
    IBM/Macronix Phase Change Memory Joint Project, Macronix Int. Co., Ltd., HsinChu, Taiwan
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    909
  • Lastpage
    912
  • Abstract
    Recent advances of a highly scalable bridge phase change memory cell are presented. To fabricate and characterize highly scaled devices, designs in both the process procedure and the testing algorism are considered extensively. We also compare the characteristics of the devices made from different types of materials. The experimental data reveal the superior scaling properties of the bridge phase change memory in different materials.
  • Keywords
    phase change memories; bridge phase change memory; memory cell; phase change memory; Bridges; Dielectric thin films; Electrodes; Lithography; MOSFET circuits; Phase change materials; Phase change memory; Scalability; Testing; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734693
  • Filename
    4734693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147031