Tunable Y laser with reactive ion etched mirror facets suitable for integration

Author

Schilling, M. ; Daub, K. ; Lach, E. ; Laube, G.

Author_Institution

Optoelectron. Components Div., Alcatel SEL, Stuttgart, Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

37

Lastpage

40

Abstract

The tunable Y laser is realised for the first time in an integratable form featuring dry etched facets. Reactive ion etching with a CH₄/H₂/CO₂ gas mixture is successfully applied for the mirror formation. First devices with asymmetrically dry etched branches exhibit a low cw threshold current of 4×18 mA and a wide tuning range of 15.6 nm using “single knob” tuning by only one tuning current

Keywords

integrated optics; laser tuning; mirrors; optical workshop techniques; semiconductor lasers; sputter etching; CH₄/H₂/CO₂ gas mixture; MQW lasers; asymmetrically dry etched branches; cw threshold current; dry etched facets; integratable form; mirror formation; reactive ion etched mirror facets; single knob tuning; tunable Y laser; tuning current; tuning range; Dry etching; Gas lasers; Laser tuning; Mirrors; Optical interferometry; Optical tuning; Quantum well devices; Space technology; Threshold current; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328154

Filename

328154