DocumentCode
2147112
Title
TE/TM mode conversion in silicon waveguides using selective stress applying oxide patches and etched oxide windows
Author
Liang, T.K. ; Nunes, L.R. ; Tsang, H.K. ; Tsuchiya, M.
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Japan
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
126
Lastpage
128
Abstract
We demonstrate TE/TM mode conversion in silicon waveguides. The application of stress by oxide patches and etched oxide windows respectively enabled over 40% polarization conversion and allowed operation over a wide wavelength range.
Keywords
elemental semiconductors; etching; light polarisation; optical planar waveguides; photoelasticity; silicon; Si; TE/TM mode conversion; etched oxide windows; oxide patches; polarization conversion; selective stress; silicon waveguides; Etching; Optical films; Optical polarization; Optical waveguides; Oxidation; Plasma temperature; Silicon; Tellurium; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516426
Filename
1516426
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