Title :
Harmonic Power Generation of GaAs-IMPATT Devices up to 240 GHz
Author :
Böhm, H. ; Freyer, J. ; Claassen, M.
Author_Institution :
Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, ArcisstraÃ\x9fe 21, D-80333 Mÿnchen, Germany. Phone: ++49 (0)89 289-22948, Fax: ++49 (0)89 289-22950, E-mail: aet@ei.tum.de
Abstract :
Cw-harmonic power generation of self-pumped GaAs double-drift IMPATT diodes are investigated both, theoretically and experimentally. Device analysis is carried out by a drift-diffusion model, adjusted by Monte Carlo simulations for the high-field region. The applied disc resonator is numerically calculated by a finite element programme. The optimisation procedure for the harmonic mode IMPATT-oscillator is described. Experimental results are given in the frequency range up to 240 GHz.
Keywords :
Current density; Diodes; Electronic mail; Finite element methods; Frequency; Gallium arsenide; Power generation; Power system harmonics; Space charge; Voltage;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338422
