Electrical properties of multilayer silicon nano-crystal nonvolatile memory

Author

Zhang, Zhigang ; Wang, Liudi ; Mao, Ping ; Pan, Liyang ; Xu, Lun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

962

Lastpage

965

Abstract

Nonvolatile memories with triple layers silicon nanocrystals have been fabricated with conventional CMOS technology. In this paper, the program and erase performance and reliability of nanocrystal nonvolatile memories (NCNVMs) with triple layers of nanocrystals are investigated. Experiment result indicates that the nanocrystals in the triple layers NCNVMs are difficult to be fully charged during program process for the second and third layers nanocrystals at low applied gate voltage. The program and erase transient characteristics for the triple NCNVMs is also measured at various programming times. The charges mainly trapped at the first layer nanocrystal below 1 ms, and then transferred to the second and third layer silicon nanocrystal as increasing program time further more. The reliability performance is analyzed by endurance measurement. The memory window has little degradation after 10⁴ cycling.

Keywords

CMOS digital integrated circuits; elemental semiconductors; integrated circuit reliability; nanotechnology; random-access storage; silicon; Si; conventional CMOS technology; electrical properties; endurance measurement; multilayer silicon nanocrystal nonvolatile memory; transient characteristics; Annealing; Atmosphere; CMOS technology; Nanocrystals; Nonhomogeneous media; Nonvolatile memory; Pulse measurements; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734703

Filename

4734703