• DocumentCode
    2147289
  • Title

    Sensor-wise methodology to face NBTI stress of NoC buffers

  • Author

    Zoni, Davide ; Fornaciari, William

  • Author_Institution
    Politecnico di Milano - Dipartimento di Elettronica e Informazione, Via Ponzio 34/5, 20133, Italy
  • fYear
    2013
  • fDate
    18-22 March 2013
  • Firstpage
    1038
  • Lastpage
    1043
  • Abstract
    Networks-on-Chip (NoCs) are a key component for the new many-core architectures, from the performance and reliability stand-points. Unfortunately, continuous scaling of CMOS technology poses severe concerns regarding failure mechanisms such as NBTI and stress-migration. Process variation makes harder the scenario, decreasing device lifetime and performance predictability during chip fabrication. This paper presents a novel cooperative sensor-wise methodology to reduce the NBTI degradation in the network on-chip (NoC) virtual channel (VC) buffers, considering process variation effects as well. The changes introduced to the reference NoC model exhibit an area overhead below 4%. Experimental validation is obtained using a cycle accurate simulator considering both real and synthetic traffic patterns. We compare our methodology to the best sensor-less round-robin approach used as reference model. The proposed sensor-wise strategy achieves up to 26.6% and 18.9% activity factor improvement over the reference policy on synthetic and real traffic patterns respectively. Moreover a net NBTI Vth saving up to 54.2% is shown against the baseline NoC that does not account for NBTI.
  • Keywords
    Buffer storage; Degradation; MOSFET; Performance evaluation; Ports (Computers); Stress; System-on-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013
  • Conference_Location
    Grenoble, France
  • ISSN
    1530-1591
  • Print_ISBN
    978-1-4673-5071-6
  • Type

    conf

  • DOI
    10.7873/DATE.2013.216
  • Filename
    6513662