DocumentCode :
2147289
Title :
Sensor-wise methodology to face NBTI stress of NoC buffers
Author :
Zoni, Davide ; Fornaciari, William
Author_Institution :
Politecnico di Milano - Dipartimento di Elettronica e Informazione, Via Ponzio 34/5, 20133, Italy
fYear :
2013
fDate :
18-22 March 2013
Firstpage :
1038
Lastpage :
1043
Abstract :
Networks-on-Chip (NoCs) are a key component for the new many-core architectures, from the performance and reliability stand-points. Unfortunately, continuous scaling of CMOS technology poses severe concerns regarding failure mechanisms such as NBTI and stress-migration. Process variation makes harder the scenario, decreasing device lifetime and performance predictability during chip fabrication. This paper presents a novel cooperative sensor-wise methodology to reduce the NBTI degradation in the network on-chip (NoC) virtual channel (VC) buffers, considering process variation effects as well. The changes introduced to the reference NoC model exhibit an area overhead below 4%. Experimental validation is obtained using a cycle accurate simulator considering both real and synthetic traffic patterns. We compare our methodology to the best sensor-less round-robin approach used as reference model. The proposed sensor-wise strategy achieves up to 26.6% and 18.9% activity factor improvement over the reference policy on synthetic and real traffic patterns respectively. Moreover a net NBTI Vth saving up to 54.2% is shown against the baseline NoC that does not account for NBTI.
Keywords :
Buffer storage; Degradation; MOSFET; Performance evaluation; Ports (Computers); Stress; System-on-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013
Conference_Location :
Grenoble, France
ISSN :
1530-1591
Print_ISBN :
978-1-4673-5071-6
Type :
conf
DOI :
10.7873/DATE.2013.216
Filename :
6513662
Link To Document :
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