A quantum dot based vertical cavity optical modulator for chip-to-chip interconnects in Si VLSI

Author

Shi, Bin ; Xie, Ya-Hong

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA

fYear

2005

fDate

21-23 Sept. 2005

Firstpage

146

Lastpage

148

Abstract

A new optical modulator is proposed based on electrical field induced saturation absorption of CdSe quantum dots (QDs). This can be easily integrated with silicon VLSI and can be fabricated on the finished silicon VLSI wafers. The fabrication of the modulator arrays demands minimum intrusion to the conventional Si CMOS process flow.

Keywords

II-VI semiconductors; VLSI; cadmium compounds; electro-optical effects; electro-optical modulation; elemental semiconductors; integrated circuit interconnections; optical interconnections; optical saturable absorption; semiconductor quantum dots; silicon; CdSe; Si; Si VLSI; chip-to-chip interconnects; quantum dot; saturation absorption; vertical cavity optical modulator; Absorption; III-V semiconductor materials; Integrated circuit interconnections; Optical devices; Optical interconnections; Optical modulation; Optical saturation; Quantum dots; US Department of Transportation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2005. 2nd IEEE International Conference on

Print_ISBN

0-7803-9070-9

Type

conf

DOI

10.1109/GROUP4.2005.1516433

Filename

1516433

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147313