Title :
A quantum dot based vertical cavity optical modulator for chip-to-chip interconnects in Si VLSI
Author :
Shi, Bin ; Xie, Ya-Hong
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA
Abstract :
A new optical modulator is proposed based on electrical field induced saturation absorption of CdSe quantum dots (QDs). This can be easily integrated with silicon VLSI and can be fabricated on the finished silicon VLSI wafers. The fabrication of the modulator arrays demands minimum intrusion to the conventional Si CMOS process flow.
Keywords :
II-VI semiconductors; VLSI; cadmium compounds; electro-optical effects; electro-optical modulation; elemental semiconductors; integrated circuit interconnections; optical interconnections; optical saturable absorption; semiconductor quantum dots; silicon; CdSe; Si; Si VLSI; chip-to-chip interconnects; quantum dot; saturation absorption; vertical cavity optical modulator; Absorption; III-V semiconductor materials; Integrated circuit interconnections; Optical devices; Optical interconnections; Optical modulation; Optical saturation; Quantum dots; US Department of Transportation; Very large scale integration;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516433
