Metal induced continuous grain polycrystalline silicon thin film transistors

Author

Kwok, Hoi Sing ; Wong, Man ; Zhao, Shuyun ; Meng, Zhiguo

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

970

Lastpage

973

Abstract

Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.

Keywords

annealing; crystallisation; elemental semiconductors; semiconductor thin films; silicon; thin film transistors; Si; active matrix field sequential color LCD; annealing time; continuous zonal domain; crystallization; p-channel thin film transistors; pre-defined crystalline nucleation lines; silicon thin film transistors; Active matrix addressing; Annealing; Crystallization; Glass; Power capacitors; Process control; Semiconductor films; Silicon; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734705

Filename

4734705