Title :
Metal induced continuous grain polycrystalline silicon thin film transistors
Author :
Kwok, Hoi Sing ; Wong, Man ; Zhao, Shuyun ; Meng, Zhiguo
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.
Keywords :
annealing; crystallisation; elemental semiconductors; semiconductor thin films; silicon; thin film transistors; Si; active matrix field sequential color LCD; annealing time; continuous zonal domain; crystallization; p-channel thin film transistors; pre-defined crystalline nucleation lines; silicon thin film transistors; Active matrix addressing; Annealing; Crystallization; Glass; Power capacitors; Process control; Semiconductor films; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734705
