Title :
State-Of-The-Art Performance of a Heterostructure Barrier Varactor Tripler Operating at 250 GHz
Author :
Mélique, X. ; Maestrini, A. ; Goutoule, J.M. ; Goy, P. ; Mounaix, P. ; Trier, M. ; Vanbésien, O. ; Beaudin, G. ; Lippens, D.
Author_Institution :
Institut d´´Electronique et de Microélectronique du Nord, USTL, Avenue Poincaré BP 69, F-59652 Villeneuve, d´´Ascq Cedex, France. Email: Xavier.Mélique@IEMN.univ-Lillel.fr
Abstract :
Record performances were demonstrated in terms of output power (>9 mW) and conversion efficiency (12%) for a 250 GHz Heterostructure Barrier Varactor tripler. These excellent performances can be explained by the highly non linear capacitance-voltage characteristics of InGaAs/InAlAs/AlAs diodes having a zero-bias capacitance of 1fF/¿m2, a capacitance ratio of 6:1 and a breakdown voltage of 12 V.
Keywords :
Capacitance; Capacitance-voltage characteristics; Doping; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Power generation; Semiconductor diodes; Varactors;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338423
