Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures

Author

Agrawal, Nidhi ; Wegener, Martin

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

83

Lastpage

86

Abstract

We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; electron mobility; gallium arsenide; high-speed optical techniques; indium compounds; 1 ps; InGaAlAs-InP; InGaAlAs/InP graded-gap electron transfer optical modulator structures; electrical behavior; electroabsorption; high speed applications; time constants; ultrafast electron dynamics; Electron optics; High speed optical techniques; Indium compounds; Indium phosphide; Optical modulation; Optical refraction; Optical variables control; Photonic band gap; Reservoirs; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328166

Filename

328166