DocumentCode :
2147425
Title :
Multi-color emission wavelength switching in a strained Si1-xGex/Si quantum well
Author :
Yasuhara, N. ; Fukatsu, S.
Author_Institution :
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
157
Lastpage :
158
Abstract :
Three-color voltage-controlled emission wavelength switching (VCEWS) is demonstrated in a strained Si1-x Gex/Si triple quantum well, paving a way toward a Si-based, monolithic multi-color-selectable light emitting diode.
Keywords :
Ge-Si alloys; electro-optical switches; elemental semiconductors; light emitting diodes; optical tuning; photoluminescence; semiconductor quantum wells; silicon; Si-based monolithic multicolor-selectable light emitting diode; Si1-xGex-Si; strained Si1-x Gex/Si triple quantum well; voltage-controlled emission wavelength switching; Art; Charge carrier density; Charge carrier processes; Electroluminescence; Electron emission; Light emitting diodes; Photoluminescence; Proportional control; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516437
Filename :
1516437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2147425
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