DocumentCode
2147434
Title
Electro-Thermal Large-Signal Modeling of SiGe HBTs
Author
Sinnesbichler, F.X. ; Olbrich, G.R.
Author_Institution
Technische Universitaet Muenchen, Lehrstuhl fuer Hochfrequenztechnik, Arcisstr. 21, 80333 Muenchen, Germany. Email: Sinnesbichler@ei.tum.de
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
125
Lastpage
128
Abstract
The temperature dependence of double-mesa SiGe HBTs is investigated. The different bandgaps of the hetero junctions cause the characteristic temperature behavior of HBTs. A straight forward method to extract the effective bandgaps of base, emitter and collector is explained. The thermal resistance is calculated and a dependence on temperature and on dissipated power similar to GaAs is found. For modeling purposes, as a first approximation, a constant value for the thermal resistance can be assumed. Finally a complete large-signal modeling is done using a VBIC model. The excellent agreement of measured and simulated performance of 47 GHz and 50 GHz oscillators validates our results.
Keywords
Equations; Frequency; Gallium arsenide; Germanium silicon alloys; Oscillators; Photonic band gap; Silicon germanium; Temperature dependence; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338426
Filename
4139455
Link To Document