DocumentCode
2147458
Title
Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies
Author
Aufinger, K. ; Knapp, H. ; Gabl, R. ; Meister, T.F. ; Böck, J. ; Schäfer, H. ; Pohl, M. ; Treitinger, L.
Author_Institution
Infineon Technologies AG, Corporate Research, Otto-Hahn-Ring 6, D-81730 Munich, Germany. email: Klaus.Aufinger@infineon.com
Volume
2
fYear
1999
fDate
4-6 Oct. 1999
Firstpage
129
Lastpage
132
Abstract
This paper presents the noise characteristics of 0.5 μm / 50 GHz Si [8] and 0.5 μm / 70 GHz SiGe [5] bipolar transistors. High-frequency (HF) noise characteristics are shown and compared. Observed similarities and differences are discussed. Low-frequency (LF) noise characteristics are used to extract LF noise model parameters. The corresponding noise sources are included in SpectreRF and the model is applied to simulate oscillator noise characteristics. Comparisons with experimental results are shown which demonstrate the usefulness of the approach for optimization of phase noise.
Keywords
Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Integrated circuit noise; Low-frequency noise; Noise figure; Oscillators; Phase noise; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338427
Filename
4139456
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