Title :
High power, tunable microchip lasers
Author_Institution :
Inst. for Molecular Sci. (IMS), Okazaki
Abstract :
The high brightness-temperature laser operation and functional wavelength conversion of a tunable microchip laser is demonstrated in this paper. A peak power close to 2 MW for energy of 0.95 mJ and duration of 480 ps pulse with high beam quality is obtained in the diode end-pumped passively Q-switched Nd:Y3Al5O12 microchip laser. The results indicate the future possibility of high average power giant pulse generation in the microchip configuration.
Keywords :
Q-switching; laser tuning; microchip lasers; neodymium; optical pumping; optical wavelength conversion; yttrium compounds; Y3Al5O12:Nd; diode end-pumped passively Q-switched laser; energy 0.95 mJ; functional wavelength conversion; high average power giant pulse generation; high brightness-temperature laser operation; time 480 ps; tunable microchip lasers; Ceramics; Fiber lasers; Laser modes; Laser theory; Microchip lasers; Optical materials; Photonics; Power lasers; Solid lasers; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385859