Title :
Close-spaced MOCVD reactor for 1%-uniformity growth of In-containing materials on 4" substrates
Author :
Vernon, S.M. ; Colter, P.C. ; McNulty, D.D. ; Hogan, S.J. ; Weyburne, D.W. ; Ahern, B.S.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
We have designed, built, and characterized a reactor for highly uniform, abrupt-interface growth of InP and other materials onto 4"-diameter substrates. The reaction chamber features a water-cooled “showerhead”-type distributed injection scheme located in close proximity to the wafer. Metalorganic chemical vapor deposition (MOCVD) growth in this system has resulted in very uniform layers (better than 1% for both thickness and composition) of Ga(1-x/)In sub (x/)As, Ga(1-x/)Insub (x/)P, Al(x/)Gasub (1-x/)As, InP, and GaAs on 4" substrates
Keywords :
III-V semiconductors; chemical vapour deposition; indium compounds; semiconductor growth; 4 in; AlGaAs; GaAs; GaInAs; GaInP; In-containing materials; InP; abrupt-interface growth; close-spaced MOCVD reactor; large area substrates; uniform layers; water-cooled showerhead-type distributed injection; Chemical vapor deposition; Cooling; Fluid flow; Indium phosphide; Inductors; Laboratories; MOCVD; Resistance heating; Steel; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328172
