Reducing threshold voltage of organic field-effect transistor by using ZrO2/PMMA as gate dielectric

Author

Shang, Liwei ; Ming Liu ; Tu, Deyu ; Zhen, Lijuan ; Liu, Ge ; Ge Liu

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1037

Lastpage

1040

Abstract

By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO₂, the leakage has 4 orders of magnitude reducing compared with bare ZrO₂ layer. Low roughness of PMMA/ZrO₂ surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility, on/off current ratio, and sub-threshold slope of OFETs with bilayer dielectric are 5.6Ã—10^-2 cm²/Vs, 1.2Ã—10³, and 0.3 V/decade respectively. It is noticeable that the threshold voltage is only 0.1 V.

Keywords

carrier mobility; conducting polymers; dielectric materials; high-k dielectric thin films; organic field effect transistors; organic semiconductors; surface roughness; zirconium compounds; OFET; PMMA; ZrO₂; bilayer dielectric; evaporated layer; field effect mobility; gate dielectric; high-k material; leakage; on-off current ratio; organic field-effect transistor; organic semiconductor; poly(methyl methacrylate) layer; subthreshold slope; surface roughness; threshold voltage; Crystalline materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; OFETs; Organic semiconductors; Semiconductor materials; Threshold voltage; OFET; PMMA; Thin film; ZrO2;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734713

Filename

4734713