Temperature dependence of photoluminescence properties of CdSxSe1−x quantum dots prepared on silicon substrate

CdS_xSe_1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdS_xSe_1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when the temperature increases from 10 K to 300 K. The sulfur component (x) of CdS_xSe_1-x QDs is about 86.45% by calculation approximatively from PL peak energy at room temperature following Vigo¿s Law. We also obtain the parameters of the varshni relation for CdS_xSe_1-x QDs from PL peak energy as a function of temperature and the best-fit curve.