AZO transparent thin film with E-gun evaporate procedure and application on light emitting diode

Author

Wu, Chia-Hsuan ; Lin, Che-Kai ; Lin, Chao-Wei ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan, Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1048

Lastpage

1051

Abstract

In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of oxygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150Â°C and without oxygen flow. With this parameter, we can obtain AZO thin film with transparency above 90% and extremely low resistivity reach to 2.4 Ã— 10^-4 (ohm-cm). Apply its on light emitting diode can also get large profit in luminescence.

Keywords

II-VI semiconductors; aluminium; light emitting diodes; luminescence; semiconductor thin films; vacuum deposition; wide band gap semiconductors; zinc compounds; AZO thin film material characteristics; AZO transparent thin film manufacture; E-gun evaporate procedure; ZnO:Al; aluminium doped zinc oxide thin films; extremely low resistivity film; light emitting diode application; luminescence; temperature 150 C; Conductivity; Indium tin oxide; Light emitting diodes; Optical films; Plasma temperature; Sputtering; Substrates; Transistors; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734716

Filename

4734716