Title :
High performance Ge p-i-n photodetectors on Si
Author :
Michel, J. ; Liu, J.F. ; Giziewicz, W. ; Pan, D. ; Wada, K. ; Cannon, D.D. ; Jongthammanurak, S. ; Danielson, D.T. ; Kimerling, L.C. ; Chen, J. ; Ilday, F. Ö ; Kärtner, F.X. ; Yasaitis, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Abstract :
We demonstrate a high performance Ge p-i-n photodetector on Si platform with an extended detection spectrum of 650-1605 nm, a 3 dB bandwidth of 8.5 GHz, and a responsivity of 0.68 A/W, measured at λ = 1040 nm.
Keywords :
elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; p-i-n photodiodes; photodetectors; silicon; 650 to 1605 nm; 8.5 GHz; Ge; Ge p-i-n photodetectors; Si; Si platform; Atomic force microscopy; Bandwidth; Detectors; III-V semiconductor materials; Optical pulses; P-i-n diodes; PIN photodiodes; Photodetectors; Pulse measurements; Silicon;
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
DOI :
10.1109/GROUP4.2005.1516444
