• DocumentCode
    2147677
  • Title

    Si and Si-compatible photodetectors

  • Author

    Campbell, Joe C. ; Huang, Zhihong ; Kong, Ning ; Oh, Jungwoo

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    183
  • Lastpage
    185
  • Abstract
    We report photodiodes fabricated on Ge grown on Si substrate. At 2 V bias these photodiodes exhibited 28 mA/cm2 dark current, 0.57 A/W responsivity, and 4 GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.
  • Keywords
    MOSFET; dark conductivity; elemental semiconductors; germanium; optical fabrication; p-i-n photodiodes; photodetectors; semiconductor growth; 2 V; 4 GHz; Ge; Ge PIN photodiodes; Si; Si MOSFET; Si substrate; dark current; monolithic fabrication; photodetectors; photodiodes; Bandwidth; Bit error rate; Buffer layers; Dark current; Electrodes; Heterojunctions; MOSFETs; PIN photodiodes; Photodetectors; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516446
  • Filename
    1516446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147677