DocumentCode :
2147677
Title :
Si and Si-compatible photodetectors
Author :
Campbell, Joe C. ; Huang, Zhihong ; Kong, Ning ; Oh, Jungwoo
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
fYear :
2005
fDate :
21-23 Sept. 2005
Firstpage :
183
Lastpage :
185
Abstract :
We report photodiodes fabricated on Ge grown on Si substrate. At 2 V bias these photodiodes exhibited 28 mA/cm2 dark current, 0.57 A/W responsivity, and 4 GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.
Keywords :
MOSFET; dark conductivity; elemental semiconductors; germanium; optical fabrication; p-i-n photodiodes; photodetectors; semiconductor growth; 2 V; 4 GHz; Ge; Ge PIN photodiodes; Si; Si MOSFET; Si substrate; dark current; monolithic fabrication; photodetectors; photodiodes; Bandwidth; Bit error rate; Buffer layers; Dark current; Electrodes; Heterojunctions; MOSFETs; PIN photodiodes; Photodetectors; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN :
0-7803-9070-9
Type :
conf
DOI :
10.1109/GROUP4.2005.1516446
Filename :
1516446
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2147677
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