InGaAsP/InP DFB laser with a new grating structure by MOCVD

Author

Yoshida, N. ; Kimura, T. ; Mizuguchi, K. ; Takemoto, A. ; Ohkura, Y. ; Murotani, T. ; Kawagishi, A.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

307

Lastpage

310

Abstract

InGaAsP/InP distributed-feedback laser diodes with a new grating structure have been successfully fabricated by MOCVD. In this structure, InGaAsP wires periodically buried in InP work as the grating. The coupling constant is determined by the thicknesses of the MOCVD multilayers but not the etched corrugation height. The threshold current and slope efficiency are 12 mA and 0.5 mW/mA, respectively. Single-longitudinal-mode operation with side-mode suppression ratio of more than 35 dB is obtained, as is good uniformity of lasing wavelength.<>

Keywords

III-V semiconductors; chemical vapour deposition; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor technology; 12 mA; DFB laser; InGaAsP wires; InGaAsP-InP laser; MOCVD multilayers; coupling constant; distributed-feedback laser diodes; grating structure by MOCVD; semiconductors; side-mode suppression ratio; single longitudinal mode operation; slope efficiency; thicknesses; threshold current; uniformity of lasing wavelength; Diode lasers; Etching; Gratings; Indium phosphide; Laboratories; Large scale integration; MOCVD; Optical waveguides; Research and development; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32818

Filename

32818