Title :
Characterisation of 210 GHz Pulsed GaAs IMPATT Diode
Author :
Benz, Christian ; Freyer, Jürgen
Author_Institution :
Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, D-80290 Mÿnchen, Germany. Phone: +49(0)89 28922948, Fax: +49(0)89 28922950, eMail: aet@ei.tum.de
Abstract :
GaAs double-drift Read IMPATT diodes are designed for pulsed operation up to 210 GHz with extremely high current densities (225 kA/cm2). The optimisation of the active device and the applied resonator structure is carried out by the help of simulation programmes. The experimental results show RF output power levels of 0.7 W at 200 GHz and 0.25 W at 210 GHz.
Keywords :
Current density; Diodes; Doping; Electrons; Gallium arsenide; Gold; Heat sinks; Power generation; Radio frequency; Temperature;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338438
