Title :
Flexible plastic single-crystal si CMOS
Author :
Ma, Zhenqiang ; Yuan, Hao-Chih ; Celler, George K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.
Keywords :
MOSFET; elemental semiconductors; flexible electronics; invertors; nanoelectronics; nanofabrication; semiconductor doping; silicon; substrates; Si; doping techniques; flexible plastic single-crystal CMOS device; inverters; plastic substrates; transferrable nanomembrane device characteristics; CMOS process; Drives; Germanium silicon alloys; Inverters; Nanoscale devices; Plastics; Semiconductor materials; Silicon germanium; Strips; Substrates;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734723
