DocumentCode
2147943
Title
InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates
Author
Sagnes, I. ; Chriqui, Y. ; Saint-Girons, G. ; Bouchoule, Sophie ; Bensahel, D. ; Kermarrec, O. ; Isella, G. ; von Kaenel, H.
Author_Institution
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
fYear
2005
fDate
21-23 Sept. 2005
Firstpage
207
Lastpage
209
Abstract
We report on RT laser operation from strained InGaAs/GaAs quantum well structures grown by MOCVD and monolithically integrated on Ge/Si substrates. The atomic layer epitaxy on exactly [001]-oriented Ge/Si virtual substrates will also be discussed.
Keywords
III-V semiconductors; MOCVD; atomic layer epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; Ge-Si; Ge/Si substrates; InGaAs-GaAs; InGaAs/GaAs sources; MOCVD; MOVPE; RT laser; atomic layer epitaxy; quantum well structures; Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Germanium silicon alloys; Indium gallium arsenide; Monolithic integrated circuits; Quantum well lasers; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2005. 2nd IEEE International Conference on
Print_ISBN
0-7803-9070-9
Type
conf
DOI
10.1109/GROUP4.2005.1516454
Filename
1516454
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