DocumentCode
2147964
Title
Analytical, Scaleable Large Signal Noise Model for GaAs and InP MMIC Applications
Author
Reuter, R. ; Leven, A.
Author_Institution
Fraunhofer Institute of Applied Solid-State Physics, Tullastra?e 72, D-79108 Freiburg, Germany. Phone: +49(0)761-5159820, Fax: +49(0)761-5159565, Email: reuter@iaf.fhg.de
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
213
Lastpage
216
Abstract
In this paper an analytical large signal noise model for GaAs-and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.
Keywords
Analytical models; Equations; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; MODFETs; Predictive models; Signal analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338448
Filename
4139477
Link To Document