Title :
Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices
Author :
Bensaoula, A.H. ; Freundlich, A. ; Rossignol, V. ; Bensaoula, A. ; Neu, G. ; Ponchet, A.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
In this paper we discuss the structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices. Structural properties of grown epilayers are discussed in the light of high resolution x-ray diffraction and transmission electron microscopy analysis. Perfectly strain balanced structures were realized using chemical beam epitaxy, i.e. the global mismatch introduced in 0.9 μm thick structure is below 8×10-5 as determined by high resolution (400) diffraction patterns. Furthermore, pure tetragonal deformations, as determined by asymmetric (ill) diffraction analysis confirm the pseudomorphism conservation. The optical properties of these superlattices were studied using low temperature photoluminescence spectroscopy and photoluminescence excitation spectroscopy
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; internal stresses; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; InP-GaAs-GaP-GaAs; asymmetric diffraction analysis; chemical beam epitax; global mismatch; grown epilayers; high resolution diffraction patterns; high resolution x-ray diffraction; low temperature photoluminescence spectroscopy; optical properties; perfectly strain balanced structures; photoluminescence excitation spectroscopy; pseudomorphism conservation; pure tetragonal deformations; strain balanced InP/GaAs/GaP/GaAs superlattices; structural properties; transmission electron microscopy analysis; Capacitive sensors; Electron optics; Gallium arsenide; Indium phosphide; Optical diffraction; Optical superlattices; Photoluminescence; Spectroscopy; Transmission electron microscopy; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328186
