Title :
Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds
Author :
Hill, C.W. ; String, G.B. ; Sadwick, L.P.
Author_Institution :
Dept. of Mater. Sci. & Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP)
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; mass spectra; pyrolysis; semiconductor growth; InP; P source; alternative P precursors; bisphosphinoethane; chemical beam epitaxial growth; low pressure conditions; low pressure pyrolysis; pyrolysis rates; reaction products; tertiarybutylphosphine; trisdimethylaminophosphorous; Chemical compounds; Chemical engineering; Cities and towns; Epitaxial growth; Hydrogen; Indium phosphide; Inductors; Materials science and technology; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328188
