• DocumentCode
    2148048
  • Title

    Conductance transient characterization of reactive ion etched HEMT gate recesses

  • Author

    Schra, Jeff E. ; Mondry, Mark ; Hu, E.L. ; Merz, James L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT
  • Keywords
    III-V semiconductors; high electron mobility transistors; indium compounds; sputter etching; AlInAs Schottky contact layer; GaInAs; GaInAs ohmic contact layer; GaInAs-AlInAs-InP; InP-based HEMT; O2 plasma clean conditions; RIE self-bias voltage; conductance transient characterization; plasma exposure time; reactive ion etched HEMT gate recesses; Dry etching; Electrical resistance measurement; HEMTs; Lighting; Plasma applications; Plasma devices; Plasma measurements; Polymers; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328189
  • Filename
    328189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2148048