Title :
Temperature dependence of breakdown in anisotropic 6H-SiC MOSFET
Author :
Li, Liu ; Yin-tang, Yang ; Chang-chun, Chai
Author_Institution :
Minist. of Edu. Key Lab. Of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
The influence of temperature on the breakdown in anisotropic 6H-SiC MOSFET is studied. Taken Si face as an example , the influence of temperature on the breakdown voltage, critical electrical field and specific on-state resistance is thoroughly analyzed. Considering the anisotropy of material, anisotropy of the breakdown is obtained in different face but the tendency of breakdown voltage vs. temperature is same, both has positive temperature coefficient.
Keywords :
MOSFET; electric breakdown; electric fields; silicon compounds; wide band gap semiconductors; SiC; anisotropic MOSFET; breakdown voltage; critical electrical field; positive temperature coefficient; silicon face; specific on-state resistance; temperature dependence; Anisotropic magnetoresistance; Charge carrier processes; Electric breakdown; Electrons; Impact ionization; MOSFET circuits; Semiconductor device modeling; Semiconductor materials; Silicon carbide; Temperature dependence;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734735
