Title :
3.7 W CW operation of
Author :
Kondo, Makoto ; Suyama, Takuro ; Hayakawa, Takeshi ; Yamamoto, Seiichi ; Hijikata, T.
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
High-power (3.7 W) CW operation has been achieved in
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 100 micron; 3.7 W; 320 mA; 50 percent; CW operation; CW output power; GRIN-SCH-QW lasers; GaAs-AlGaAs; broad-area laser; graded-index separate-confinement-heterostructure; low threshold current; molecular beam epitaxy; power conversion efficiency; quantum well lasers; semiconductors; stripe geometry; Epitaxial growth; Gallium arsenide; Laser stability; Molecular beam epitaxial growth; Optical films; Power conversion; Power lasers; Quantum well lasers; Semiconductor laser arrays; Substrates;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32819
